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AS29CF160B-55TIN

Name: Alliance Memory AS29CF160B-55TIN
Brand: Alliance Memory
SKU: 913-AS29CF160B-55TIN
Price: 14.74 USD
Availability: InStock

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Mouser No:

913-AS29CF160B-55TIN

Mfr. No:

AS29CF160B-55TIN

Mfr.:

Alliance Memory

Description:

NOR Flash Parallel 16M NOR Flash 2M X 8, 5V, TSOP 48PIN, 55NS INDUSTRIAL TEMP. BOTTOM

Datasheet:

AS29CF160B-55TIN Datasheet (PDF)

ECAD Model:

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Learn more about Alliance Memory AS29CF160B-55TIN

In Stock: 49

Stock:: 49

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On Order:: 70
Factory Lead Time:: 20

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$14.74	$14.74
	$13.96	$139.60
	$13.53	$338.25
	$12.58	$629.00
	$12.30	$1,180.80
	$12.03	$3,464.64
	$11.77	$6,779.52
1,056	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	NOR Flash
Mounting Style:	SMD/SMT
Package/Case:	TSOP-48
Series:	AS29CF160
Memory Size:	16 Mbit
Supply Voltage - Min:	4.5 V
Supply Voltage - Max:	5.5 V
Active Read Current - Max:	50 mA
Interface Type:	Parallel
Organisation:	2 M x 8/1 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Alliance Memory
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Factory Pack Quantity:	96
Subcategory:	Memory & Data Storage
Unit Weight:	12.314 g

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Datasheet

AS29CF160B-55TIN Datasheet (PDF)

CNHTS:: 8542329090
USHTS:: 8542320051
TARIC:: 8542326100
ECCN:: EAR99

AS29CF160x-55TIN Parallel NOR Flash Memories

Alliance Memory AS29CF160x-55TIN Parallel NOR Flash Memories are organized as 2,097,152 bytes of 8 bits or 1,048,576 words of 16 bits each. These memories use pins I/O₀ to I/O₇ for 8-bit data and pins I/O₀ to I/O₁₅ for 16-bit data. The AS29CF160x-55TIN Flash memories are available in 48-pin TSOP packages. These memories are designed to be programmed in-system with the standard system 5V VCC supply. The AS29CF160x-55TIN memories require only a single 5V power supply for both read and write functions. The program and erase functions use internally generated and regulated voltages.