AS4C16M32SC-7TIN

Alliance Memory
913-AS4C16M32SC-7TIN
AS4C16M32SC-7TIN

Mfr.:

Description:
DRAM SDR, 512MB, 16M x 32, 3.3V, 86PIN TSOP II, 133 MHZ, Industrial Temp - Tray

ECAD Model:
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In Stock: 29

Stock:
29 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$24.12 $24.12
$22.34 $223.40
$21.64 $541.00
$21.11 $1,055.50
$20.54 $2,218.32
$19.54 $4,220.64
$19.11 $10,319.40
1,080 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
512 Mbit
32 bit
133 MHz
TSOP-II-86
16 M x 32
17 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C16M32SC
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 70 mA
Unit Weight: 9.245 g
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Attributes selected: 0

CNHTS:
8542329010
USHTS:
8542320028
TARIC:
8542323100
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.