AS4C2M32S-7BCN

Alliance Memory
913-AS4C2M32S-7BCN
AS4C2M32S-7BCN

Mfr.:

Description:
DRAM SDRAM, 64Mb, 2M X 32, 3.3V, 90-ball BGA, 143 MHz, Commercial Temp - Tray

ECAD Model:
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In Stock: 66

Stock:
66 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$5.44 $5.44
$5.08 $50.80
$4.93 $123.25
$4.81 $240.50
$4.59 $459.00
$4.37 $830.30
$4.29 $2,445.30
$4.20 $4,788.00
$4.01 $10,666.60

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
32 bit
143 MHz
TFBGA-90
2 M x 32
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C2M32S
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 190
Subcategory: Memory & Data Storage
Supply Current - Max: 75 mA
Unit Weight: 1.849 g
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Attributes selected: 0

CNHTS:
8542329000
USHTS:
8542320002
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.