AS4C2M32SA-6TIN

Alliance Memory
913-AS4C2M32SA-6TIN
AS4C2M32SA-6TIN

Mfr.:

Description:
DRAM SDRAM, 64MB, 2M X 32, 3.3V, 86PIN, TSOP II, 166MHZ, INDUSTRIAL TEMP - Tray

ECAD Model:
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In Stock: 131

Stock:
131
Can Dispatch Immediately
On Order:
108
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$7.19 $7.19
$6.69 $66.90
$6.49 $162.25
$6.33 $316.50
$6.17 $666.36
$5.80 $1,252.80
$5.69 $3,072.60
$5.55 $5,994.00
$5.43 $11,728.80

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
32 bit
166 MHz
TSOP-II-86
2 M x 32
5.4 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C2M32SA
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 95 mA
Unit Weight: 5.868 g
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Attributes selected: 0

CNHTS:
8542329010
USHTS:
8542320002
JPHTS:
854232021
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.