AS4C4M16SA-6TCN

Alliance Memory
913-4C4M16SA-6TCN
AS4C4M16SA-6TCN

Mfr.:

Description:
DRAM SDR, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 166 MHz, Commercial Temp, A Die

Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C4M16SA-6TCN

In Stock: 66

Stock:
66 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$5.36 $5.36
$4.99 $49.90
$4.84 $121.00
$4.73 $236.50
$4.62 $498.96
$4.47 $965.52
$4.36 $2,354.40
$4.25 $4,590.00
$4.14 $10,730.88

Alternative Packaging

Mfr. Part No.:
AS4C4M16SA-6TCNTR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
$4.43
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
16 bit
166 MHz
TSOP-II-54
4 M x 16
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C4M16SA
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 50 mA
Products found:
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Attributes selected: 0

Datasheet

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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