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AS4C64M16D3B-12BIN

Name: Alliance Memory AS4C64M16D3B-12BIN
Brand: Alliance Memory
SKU: 913-4C64M16D3B12BIN
Price: 10.53 USD
Availability: InStock

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Mouser No:

913-4C64M16D3B12BIN

Mfr. No:

AS4C64M16D3B-12BIN

Mfr.:

Alliance Memory

Description:

DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Industrial Temp - Tray

Datasheet:

AS4C64M16D3B-12BIN Datasheet (PDF)

ECAD Model:

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Learn more about Alliance Memory AS4C64M16D3B-12BIN

In Stock: 28

Stock:: 28 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.53	$10.53
	$9.78	$97.80
	$9.49	$237.25
	$9.26	$463.00
	$8.83	$883.00
	$8.60	$1,634.00
	$8.46	$4,822.20
	$8.26	$9,416.40
2,660	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3
Memory Size:	1 Gbit
Data Bus Width:	16 bit
Maximum Clock Frequency:	800 MHz
Package/Case:	FBGA-96
Organisation:	64 M x 16
Access Time:	20 ns
Supply Voltage - Min:	1.425 V
Supply Voltage - Max:	1.575 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 95 C
Series:	AS4C64M16D3B
Packaging:	Tray
Brand:	Alliance Memory
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	190
Subcategory:	Memory & Data Storage
Supply Current - Max:	72 mA
Unit Weight:	1.625 g

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Datasheet

AS4C64M16D3B-12BIN Datasheet (PDF)

CAHTS:: 8542320020
USHTS:: 8542320032
MXHTS:: 8542320201
ECCN:: EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.