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AS4C64M32MD1A-5BIN

Name: Alliance Memory AS4C64M32MD1A-5BIN
Brand: Alliance Memory
SKU: 913-64M32MD1A-5BIN
Price: 11.64 USD
Availability: InStock

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Mouser No:

913-64M32MD1A-5BIN

Mfr. No:

AS4C64M32MD1A-5BIN

Mfr.:

Alliance Memory

Description:

DRAM LPDDR1, 2G, 64M x 32, 1.8v, 200MHz, 90-BALL FBGA, (A-die) Industrial Temp - Tray

Datasheet:

AS4C64M32MD1A-5BIN Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Alliance Memory AS4C64M32MD1A-5BIN

In Stock: 50

Stock:: 50 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.64	$11.64
	$10.82	$108.20
	$10.48	$262.00
	$10.23	$511.50
	$9.67	$967.00
	$9.42	$2,260.80
	$9.22	$4,425.60
	$9.10	$10,920.00
2,640	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Alliance Memory
Product Category:	DRAM
RoHS:
Type:	SDRAM Mobile - LPDDR
Memory Size:	2 Gbit
Data Bus Width:	32 bit
Maximum Clock Frequency:	200 MHz
Package/Case:	FBGA-90
Organisation:	64 M x 32
Access Time:	6.5 ns
Supply Voltage - Min:	1.7 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Alliance Memory
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	240
Subcategory:	Memory & Data Storage
Supply Current - Max:	70 mA

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Datasheet

AS4C64M32MD1A-5BIN Datasheet (PDF)

CNHTS:: 8542329000
CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

AS4C64M32MD1A-5BIN 2Gb LPDDR SDRAM

Alliance Memory AS4C64M32MD1A-5BIN 2Gb LPDR SDRAM is a four-bank mobile DDR DRAM organized as 4 banks x 16M x 32. The AS4C64M32MD1A-5BIN SDRAM is designed for high performance and operates at low power. This SDRAM comes in a double-data-rate architecture that offers two data transfers per clock cycle. The AS4C64M32MD1A-5BIN SDRAM features a bidirectional data strobe (DQS) and differential clock inputs (CK and CK#). This SDRAM provides internal temperature-compensated self-refresh, edge-aligned data output, and center-aligned data input.