AS4C64M4SA-7TCN

Alliance Memory
913-AS4C64M4SA7TCN
AS4C64M4SA-7TCN

Mfr.:

Description:
DRAM 256Mb, 3.3V, 143Mhz 64M x 4 SDRAM

ECAD Model:
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In Stock: 99

Stock:
99 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.30 $4.30
$4.01 $40.10
$3.89 $97.25
$3.80 $190.00
$3.70 $399.60
$3.55 $766.80
$3.49 $1,884.60
$3.40 $3,672.00

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
4 bit
143 MHz
TSOP-II-54
64 M x 4
5.4 ns
3 V
3.6 V
0 C
+ 70 C
AS4C64M4SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
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Attributes selected: 0

CAHTS:
8542320020
USHTS:
8542320024
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.