AS4C8M32S-6TIN

Alliance Memory
913-AS4C8M32S-6TIN
AS4C8M32S-6TIN

Mfr.:

Description:
DRAM SDRAM, 256Mb, 8M X 32, 3.3V, 86 Pin TSOP II, 166 MHz, Industrial Temp - Tray

Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$12.10 $12.10
$11.23 $112.30
$10.89 $272.25
$10.63 $531.50
$10.37 $1,119.96
$10.03 $2,166.48
$9.78 $5,281.20
$9.53 $10,292.40
2,160 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
32 bit
166 MHz
TSOP-II-86
8 M x 32
5 ns
3 V
3.6 V
- 40 C
+ 85 C
AS4C8M32S
Tray
Brand: Alliance Memory
Country of Assembly: TW
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 100 mA
Unit Weight: 11.861 g
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Attributes selected: 0

Datasheet

CNHTS:
8542329010
USHTS:
8542320024
JPHTS:
854232021
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.

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