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HMC659-SX

Name: Analog Devices Inc. HMC659-SX
Brand: Analog Devices
SKU: 584-HMC659-SX
Price: 408.23 USD
Availability: OutOfStock

Mouser No:

584-HMC659-SX

Mfr. No:

HMC659-SX

Mfr.:

Analog Devices

Description:

RF Amplifier GaAs PHEMT MMIC pow amp, DC - 18 GHz

Datasheet:

HMC659-SX Datasheet (PDF)

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Learn more about Analog Devices HMC659-SX

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Factory Lead Time:: 10 Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$408.23	$816.46
	$384.95	$3,849.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Analog Devices Inc.
Product Category:	RF Amplifier
RoHS:
Technology:	GaAs
Series:	HMC659G
Packaging:	Gel Pack
Brand:	Analog Devices
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Number of Channels:	1 Channel
Product Type:	RF Amplifier
Factory Pack Quantity:	2
Subcategory:	Wireless & RF Integrated Circuits

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Datasheet

HMC659-SX Datasheet (PDF)

RoHS Certificate (PDF)

CNHTS:: 8542319090
CAHTS:: 8542330000
USHTS:: 8542330001
JPHTS:: 8542330996
KRHTS:: 8532331000
TARIC:: 8542330000
MXHTS:: 8542330299
ECCN:: EAR99

RF Solutions

Analog Devices offers components that cover the complete high speed and RF signal chain. The portfolio enables design engineers to develop platform electronic test and measurement systems that have best-in-class performance and low cost of test and ownership across an ever increasing frequency range from DC to > 100GHz and beyond. As the preeminent supplier of data converters, RF and microwave ICs, Analog Devices provides more than 2,000 high performance products across the entire frequency spectrum.
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HMC659 MMIC PHEMT Power Amplifiers

Analog Devices HMC659LC5 MMIC Power Amplifiers are gallium arsenide (GaAs) radio-frequency devices designed for surface-mount technology (SMT) packages. The amplifier operates between direct current and 15GHz, making it ideal for radar and test equipment applications. The Monolithic Microwave Integrated Circuit device is housed in a leadless 5mm x 5mm RoHS-compliant ceramic SMT package. The pseudomorphic-high-electron-mobility-transistor (pHEMT) amplifier provides 19dB of gain, +35dBm output IP3, and +27.5dBm of output power at 1dB gain compression while requiring 300mA from a +8V supply. The HMC659 amplifier input/output is internally matched to 50Ω, facilitating integration into multi-chip modules (MCMs).