DIW170SIC070

Diotec Semiconductor
637-DIW170SIC070
DIW170SIC070

Mfr.:

Description:
SiC MOSFETs 1200V TO-247-4L, N, 120A, 1200V, 22.3m?, 175DegC

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 398

Stock:
398
Can Dispatch Immediately
On Order:
480
Factory Lead Time:
10
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$16.77 $16.77
$14.27 $142.70
$12.73 $1,527.60
$9.30 $4,743.00

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
1.7 kV
70 A
22.3 mOhms
- 5 V, + 20 V
4 V
80 nC
- 55 C
+ 175 C
416 W
Enhancement
DIW170SIC070
Brand: Diotec Semiconductor
Configuration: Single
Country of Assembly: CN
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 42 ns
Forward Transconductance - Min: 19 S
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 140 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 60 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.