It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

G3F45MT06J-TR

Name: Navitas Semiconductor G3F45MT06J-TR
Brand: GeneSiC Semiconductor
SKU: 905-G3F45MT06J-TR
Price: 7.68 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

905-G3F45MT06J-TR

Mfr. No:

G3F45MT06J-TR

Mfr.:

GeneSiC Semiconductor

Description:

SiC MOSFETs 650V 40mohm TO-263-7 G3F SiC MOSFET

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about GeneSiC Semiconductor G3F45MT06J-TR

In Stock: 775

Stock:: 775 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.68	$7.68
	$6.99	$69.90
	$6.72	$168.00
	$6.35	$635.00
	$6.11	$1,527.50
	$5.94	$2,970.00
Full Reel (Order in multiples of 800)
	$5.76	$4,608.00
2,400	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	57 A
Rds On - Drain-Source Resistance:	40 mOhms
Channel Mode:	Enhancement
Brand:	GeneSiC Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Series:	G3F
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low R_DS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

650V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch^³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.