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IS29GL256-70DLEB

Name: ISSI IS29GL256-70DLEB
Brand: ISSI
SKU: 870-IS29GL256-70DLEB
Price: 9.16 USD
Availability: InStock

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Mouser No:

870-IS29GL256-70DLEB

Mfr. No:

IS29GL256-70DLEB

Mfr.:

ISSI

Description:

NOR Flash 256M 2.7-3.6V 70ns Parallel NOR I-Temp

Datasheet:

IS29GL256-70DLEB Datasheet (PDF)

ECAD Model:

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Learn more about ISSI IS29GL256-70DLEB

In Stock: 501

Stock:: 501 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1 Maximum: 200

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.16	$9.16
	$8.52	$85.20
	$8.26	$206.50
	$8.07	$403.50
	$7.87	$787.00

Alternative Packaging

Mfr. Part No.:

IS29GL256-70DLEB-TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$9.02

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	BGA-64
Series:	IS29GL256
Memory Size:	256 Mbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	45 mA
Interface Type:	Parallel
Organisation:	32 M x 8/16 M x 16
Data Bus Width:	8 bit/16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	70 ns
Factory Pack Quantity:	260
Subcategory:	Memory & Data Storage

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Datasheet

IS29GL256-70DLEB Datasheet (PDF)

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CNHTS:: 8542320000
CAHTS:: 8542320040
USHTS:: 8542320051
TARIC:: 8542326100
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

IS29GL256 Parallel Flash Memory Devices

ISSI IS29GL256 Parallel Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The ISSI IS29GL256 devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption.