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IS62WV6416BLL-55BLI

Name: ISSI IS62WV6416BLL-55BLI
Brand: ISSI
SKU: 87062WV6416BLL55BLI
Price: 2.77 USD
Availability: InStock

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Mouser No:

87062WV6416BLL55BLI

Mfr. No:

IS62WV6416BLL-55BLI

Mfr.:

ISSI

Description:

SRAM 1Mb 64Kx16 55ns Async SRAM

Datasheet:

IS62WV6416BLL-55BLI Datasheet (PDF)

ECAD Model:

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Learn more about ISSI IS62WV6416BLL-55BLI

Delivery Alerts:

This product may require additional documentation to export from the United States.

In Stock: 208

Stock:: 208 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.77	$2.77
	$2.59	$25.90
	$2.51	$62.75
	$2.45	$122.50
	$2.40	$240.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	SRAM
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Memory Size:	1 Mbit
Organisation:	64 k x 16
Access Time:	55 ns
Interface Type:	Parallel
Supply Voltage - Max:	3.6 V
Supply Voltage - Min:	2.5 V
Supply Current - Max:	5 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	TFBGA-48
Packaging:	Tray
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Data Rate:	SDR
Moisture Sensitive:	Yes
Product Type:	SRAM
Series:	IS62WV6416BLL
Factory Pack Quantity:	480
Subcategory:	Memory & Data Storage
Type:	Asynchronous

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Datasheet

IS62WV6416BLL-55BLI Datasheet (PDF)

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CNHTS:: 8542329000
CAHTS:: 8542320041
USHTS:: 8542320041
JPHTS:: 8542320194
KRHTS:: 8542321020
TARIC:: 8542324500
MXHTS:: 8542320299
ECCN:: 3A001.B.2.B

Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.