IS66WVC2M16EALL-7010BLI

ISSI
870-VC2M16EAL7010BLI
IS66WVC2M16EALL-7010BLI

Mfr.:

Description:
SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 480   Multiples: 480
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.46 $2,140.80
$4.45 $4,272.00
2,880 Quote

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
70 ns
Parallel
1.95 V
1.7 V
30 mA
- 40 C
+ 85 C
SMD/SMT
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Product Type: SRAM
Series: IS66WVC2M16EALL
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Unit Weight: 3.221 g
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Attributes selected: 0

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CNHTS:
8542329000
CAHTS:
8542320041
USHTS:
8542320041
JPHTS:
854232029
KRHTS:
8542321020
TARIC:
8542324500
MXHTS:
8542320201
ECCN:
EAR99

Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.