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LF2104NTR

Name: IXYS LF2104NTR
Brand: IXYS Integrated Circuits
SKU: 747-LF2104NTR
Price: 1.17 USD
Availability: OutOfStock

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Mouser No:

747-LF2104NTR

Mfr. No:

LF2104NTR

Mfr.:

IXYS Integrated Circuits

Description:

Gate Drivers Half-Bridge DRVR 130mA SOIC(N)-8

Datasheet:

LF2104NTR Datasheet (PDF)

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More Information

Learn more about IXYS Integrated Circuits LF2104NTR

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Factory Lead Time:: 24 Weeks Estimated factory production time.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.17	$1.17
	$0.844	$8.44
	$0.764	$19.10
	$0.675	$67.50
	$0.633	$158.25
	$0.607	$303.50
	$0.586	$586.00
Full Reel (Order in multiples of 2500)
	$0.572	$1,430.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	1 Driver
Number of Outputs:	2 Output
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	70 ns
Fall Time:	35 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	IXYS Integrated Circuits
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Logic Type:	CMOS, TTL
Maximum Turn-Off Delay Time:	220 ns
Maximum Turn-On Delay Time:	820 ns
Moisture Sensitive:	Yes
Operating Supply Current:	350 uA
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	60 ns
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LF2104NTR Datasheet (PDF)

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TARIC:: 8542399000
USHTS:: 8542390090
ECCN:: EAR99

Gate Drivers for N-Channel MOSFETs & IGBTs

IXYS Gate Drivers for N-Channel MOSFETs and IGBTs include high-voltage high-speed gate drivers and three-phase gate driver ICs. These devices are designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration or high-side / low-side configuration. The high-voltage technology enables the high side to switch to 600V in a bootstrap operation. The drivers provide feature high pulse current buffers designed for minimum driver cross conduction. Other features include logic inputs with 3.3V capability, Schmitt triggered logic inputs, and undervoltage lockout (UVLO) protection. IXYS Gate Drivers for N-Channel MOSFETs and IGBTs operate over an extended temperature range of -40°C to +125°C.