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IXBT10N170

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See Product Specifications

Mouser No:

747-IXBT10N170

Mfr. No:

IXBT10N170

Mfr.:

IXYS

Description:

IGBTs 10 Amps 1700V 2.3 Rds

Datasheet:

IXBT10N170 Datasheet

ECAD Model:

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Delivery Restriction:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
REACH - SVHC:
Technology:	Si
Package/Case:	D3PAK-3 (TO-268-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV
Collector-Emitter Saturation Voltage:	3.4 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	20 A
Pd - Power Dissipation:	140 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXBT10N170
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	40 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	4.500 g

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Datasheet

IXBT10N170 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

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