+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXFN300N10P

Name: IXYS IXFN300N10P
Brand: IXYS
SKU: 747-IXFN300N10P
Price: 46.24 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXFN300N10P

Mfr. No:

IXFN300N10P

Mfr.:

IXYS

Description:

MOSFET Modules Polar Power MOSFET HiPerFET

Datasheet:

IXFN300N10P Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXFN300N10P

In Stock: 1,156

Stock:: 1,156 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$46.24	$46.24
	$34.80	$348.00
	$32.38	$3,238.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	295 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.07 kW
Series:	IXFN300N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	25 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	35 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	Polar Power MOSFET HiPerFET
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	36 ns
Width:	25.42 mm
Unit Weight:	30 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFN300N10P Datasheet

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.