IXSJ43N120R1K

IXYS
747-IXSJ43N120R1K
IXSJ43N120R1K

Mfr.:

Description:
SiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 286

Stock:
286 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$19.08 $19.08
$14.25 $142.50
$12.32 $1,478.40

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
Through Hole
ISO247-4
N-Channel
1 Channel
1.2 kV
46 A
47 mOhms
21 V
4.8 V
79 nC
- 40 C
+ 150 C
143.7 W
Enhancement
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 8 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 15 ns
Series: IXSJxxN120R1K
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Power MOSFET
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 14 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IXSJxN120R1K 1200V SiC Power MOSFETs

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs feature up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on). These IXYS SiC power MOSFETs offer a low gate charge of 79nC (IXSJ43N120R1K) or 155nC (IXS80N120R1K) and a low input capacitance of 2453pF (IXSJ43N120R1K) or 4556pF (IXSJ80N120R1K). The IXSJxN120R1K provides a 15V to 18V flexible gate voltage range and a recommended turn-off gate voltage of 0V. Applications include electric vehicle (EV) charging infrastructures, solar inverters, switch-mode power supplies, uninterruptible power supplies, motor drives, and more.