+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXTH60N20X4

Name: IXYS IXTH60N20X4
Brand: IXYS
SKU: 747-IXTH60N20X4
Price: 13.05 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXTH60N20X4

Mfr. No:

IXTH60N20X4

Mfr.:

IXYS

Description:

MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-247 package, MOSFET

Datasheet:

IXTH60N20X4 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXTH60N20X4

In Stock: 396

Stock:: 396 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$13.05	$13.05
	$7.91	$79.10
	$7.56	$907.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	X4-Class
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	10 ns
Forward Transconductance - Min:	34 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	IXTx60N20X4
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	13 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXTH60N20X4 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ R_DS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.