IXTP170N13X4

IXYS
747-IXTP170N13X4
IXTP170N13X4

Mfr.:

Description:
MOSFETs IXTP170N13X4

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about IXYS IXTP170N13X4

Availability

Stock:
Non-Stocked
Factory Lead Time:
27 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 50
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$9.39 $2,817.00
$8.30 $4,150.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
135 V
170 A
6.3 mOhms
- 20 V, 20 V
2.5 V
105 nC
- 55 C
+ 175 C
480 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 7 ns
Forward Transconductance - Min: 70 S
Product Type: MOSFETs
Rise Time: 8 ns
Series: X4-Class
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46 ns
Typical Turn-On Delay Time: 26 ns
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

Electric Vehicle Charging Solutions

Littelfuse Electric Vehicle (EV) Charging Solutions allow designers to select the ideal solution to ensure their EV charging units are functional and safe. Off-board EV charging stations operate in harsh environments subject to extreme heat and cold, rain, snow and lightning strikes. Littelfuse products protect against these hazards, minimising the risk of faults.

X4-Class 135V-200V Power MOSFETs

IXYS X4-Class 135V-200V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses and lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads and lowers gate drive requirements. These MOSFETs are also avalanche-rated and exhibit a superior dv/dt performance. Due to its positive temperature coefficient of on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.