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IXYH55N120B4H1

Name: IXYS IXYH55N120B4H1
Brand: IXYS
SKU: 576-IXYH55N120B4H1
Price: 17.11 USD
Availability: InStock

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Mouser No:

576-IXYH55N120B4H1

Mfr. No:

IXYH55N120B4H1

Mfr.:

IXYS

Description:

IGBTs IXYH55N120B4H1

Datasheet:

IXYH55N120B4H1 Datasheet (PDF)

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In Stock: 315

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$17.11	$17.11
	$10.61	$106.10
	$9.24	$1,108.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.8 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	138 A
Pd - Power Dissipation:	650 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	138 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXYH55N120B4H1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

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