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IXYN110N120C4H1

Name: IXYS IXYN110N120C4H1
Brand: IXYS
SKU: 576-IXYN110N120C4H1
Price: 41.17 USD
Availability: InStock

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Mouser No:

576-IXYN110N120C4H1

Mfr. No:

IXYN110N120C4H1

Mfr.:

IXYS

Description:

IGBT Modules IXYN110N120C4H1

Datasheet:

IXYN110N120C4H1 Datasheet (PDF)

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In Stock: 109

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Factory Lead Time:: 51 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$41.17	$41.17
	$32.06	$320.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Modules
Configuration:	Copack (Sonic-FRD)
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.9 V
Continuous Collector Current at 25 C:	210 A
Gate-Emitter Leakage Current:	100 nA
Pd - Power Dissipation:	830 W
Package/Case:	SOT-227B
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Mounting Style:	Screw Mount
Product Type:	IGBT Modules
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Tradename:	XPT

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Datasheet

IXYN110N120C4H1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V Trench XPT™ IGBTs with Sonic Diodes

Littelfuse 1200V Trench XPT™ Insulated-gate Bipolar Transistors (IGBTs) with Sonic Diodes are developed using XPT thin-wafer technology and Trench IGBT processes. The transistors feature reduced thermal resistance and are optimized for low switching loss. Littelfuse 1200V Trench XPT IGBTs with Sonic Diodes offer a high current handling capacity, high power density, and an anti-parallel sonic diode. These Trench XPT transistors are ideal for power inverter, motor drive, power factor correction (PFC) circuit, and battery charger applications.

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