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1EDI3023ASXUMA1

Name: Infineon 1EDI3023ASXUMA1
Brand: Infineon Technologies
SKU: 726-1EDI3023ASXUMA1
Price: 4.8 USD
Availability: InStock

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Mouser No:

726-1EDI3023ASXUMA1

Mfr. No:

1EDI3023ASXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers HVGD_TRACT

Datasheet:

1EDI3023ASXUMA1 Datasheet (PDF)

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In Stock: 2,443

Stock:: 2,443 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$4.80	$4.80
	$3.65	$36.50
	$3.31	$82.75
	$3.04	$304.00
	$2.89	$722.50
	$2.80	$1,400.00
Full Reel (Order in multiples of 1000)
	$2.59	$2,590.00
	$2.44	$4,880.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	Isolated Gate Drivers
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	DSO-20
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	20 A
Supply Voltage - Min:	3 V
Supply Voltage - Max:	5.5 V
Configuration:	Inverting, Non-Inverting
Rise Time:	55 ns
Fall Time:	45 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Qualification:	AEC-Q100
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	ID
Country of Diffusion:	DE
Country of Origin:	DE
Maximum Turn-Off Delay Time:	120 ns
Maximum Turn-On Delay Time:	120 ns
Moisture Sensitive:	Yes
Operating Supply Current:	5 mA
Pd - Power Dissipation:	300 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	120 ns
Rds On - Drain-Source Resistance:	1 Ohms
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	SiC
Tradename:	EiceDriver
Part # Aliases:	1EDI3023AS SP002355558

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Datasheet

1EDI3023ASXUMA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

Automotive Solutions

Infineon Automotive Solutions are a comprehensive and reliable portfolio of products for automotive and other applications. Infineon has 40 years of experience developing and producing products to meet automotive market demands. These technologies are used to design and produce a large number of power products to meet all automotive, transportation, lighting and motor-drive industry requirements. These products are automotive qualified (AEC-Q100 or AEC-Q101) and available for current and future electronic system designs.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.