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AIMW120R060M1HXKSA1

Name: Infineon AIMW120R060M1HXKSA1
Brand: Infineon Technologies
SKU: 726-W120R060M1HXKSA1
Price: 27.75 USD
Availability: InStock

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Mouser No:

726-W120R060M1HXKSA1

Mfr. No:

AIMW120R060M1HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SIC_DISCRETE

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

AIMW120R060M1HXKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies AIMW120R060M1HXKSA1

In Stock: 781

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$27.75	$27.75
	$18.00	$180.00
	$17.80	$1,780.00
	$17.79	$8,539.20

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.7 V
Qg - Gate Charge:	31 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 mW
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	CoolSiC 1200V
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	AIMW120R060M1H SP005417583

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Datasheet

AIMW120R060M1HXKSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an R_DS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.