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IAUS260N10S5N019TATMA1

Name: Infineon IAUS260N10S5N019TATMA1
Brand: Infineon Technologies
SKU: 726-US260N10S5N019T1
Price: 5.96 USD
Availability: InStock

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Mouser No:

726-US260N10S5N019T1

Mfr. No:

IAUS260N10S5N019TATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs MOSFET_(75V 120V(

Datasheet:

IAUS260N10S5N019TATMA1 Datasheet (PDF)

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In Stock: 6,430

Stock:: 6,430 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.96	$5.96
	$3.85	$38.50
	$2.88	$288.00
	$2.84	$1,420.00
	$2.65	$2,650.00
Full Reel (Order in multiples of 1800)
	$2.32	$4,176.00
23,400	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	250 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	128 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	MY
Country of Diffusion:	DE
Country of Origin:	DE
Product Type:	MOSFETs
Factory Pack Quantity:	1800
Subcategory:	Transistors
Part # Aliases:	IAUS260N10S5N019T SP002952334

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Datasheet

IAUS260N10S5N019TATMA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

OptiMOS™ 5 75V-100V Automotive MOSFETs

Infineon Technologies OptiMOS™ 5 75V to 100V Automotive MOSFETs are designed for high-performance applications and feature an extended qualification that goes beyond AEC-Q101 standards. The N-channel enhancement mode device combines a robust design with advanced technology, integrating Linear FET (LINFET) and low RDS(on) FET (ONFET) characteristics into a single package. This dual-gate configuration provides dedicated gate pins for each MOSFET, enhancing flexibility and control in circuit design. The Linear FET boasts an improved Safe Operating Area (SOA) and superior paralleling capabilities, ensuring reliable linear operation under varying conditions. The Infineon Technologies OptiMOS™ 5 75V to 100V MOSFETs operate within a wide -55°C to +175°C temperature range and are available in a PG-HSOF-8-2 package.