IDK02G120C5XTMA1

Infineon Technologies
726-IDK02G120C5XTMA1
IDK02G120C5XTMA1

Mfr.:

Description:
SiC Schottky Diodes SIC DISCRETE

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In Stock: 1,004

Stock:
1,004 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$2.71 $2.71
$1.75 $17.50
$1.21 $121.00
$0.974 $487.00
Full Reel (Order in multiples of 1000)
$0.91 $910.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
Single
2 A
1.2 kV
1.65 V
18 A
50 uA
- 55 C
+ 175 C
IDKXG120C5
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: MY
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Tradename: CoolSiC
Part # Aliases: IDK02G120C5 SP002739618
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CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

1200V CoolSiC Generation 5 Schottky Diodes

Infineon 1200V CoolSiC Generation 5 Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Generation 5 target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With Generation 5, reduction of forward voltage and its temperature dependency brings a new level of system efficiency. Moreover, an improved thermal performance compared to a silicon based solution increases system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.
Learn More

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.