It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IMCQ120R078M2HXTMA1

Name: Infineon IMCQ120R078M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMCQ120R078M2HXT
Price: 7.4 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IMCQ120R078M2HXT

Mfr. No:

IMCQ120R078M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMCQ120R078M2HXTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IMCQ120R078M2HXTMA1

In Stock: 317

Stock:: 317 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.40	$7.40
	$5.92	$59.20
	$4.79	$479.00
	$4.26	$2,130.00
Full Reel (Order in multiples of 750)
	$3.77	$2,827.50

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-HDSOP-22-U03
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	205 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5.1 V
Qg - Gate Charge:	23.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	176 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	4.8 ns
Forward Transconductance - Min:	3 S
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	3.2 ns
Series:	1200 V G2
Factory Pack Quantity:	750
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	11.7 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	IMCQ120R078M2H SP005974971

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IMCQ120R078M2HXTMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage V_GS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.