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IMTA65R026M2HXTMA1

Name: Infineon IMTA65R026M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMTA65R026M2HXTM
Price: 11.08 USD
Availability: OutOfStock

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Mouser No:

726-IMTA65R026M2HXTM

Mfr. No:

IMTA65R026M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC MOSFET 750 V G2

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMTA65R026M2HXTMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IMTA65R026M2HXTMA1

Availability

Stock:: 0

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$11.08	$11.08
	$8.06	$80.60
	$6.71	$671.00
	$5.98	$2,990.00
	$5.59	$5,590.00
Full Reel (Order in multiples of 2000)
	$5.59	$11,180.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PG-LHSOF-4
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	79 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 7 V to + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	357 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	5.1 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	10.1 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	16 ns
Typical Turn-On Delay Time:	9.3 ns
Part # Aliases:	IMTA65R026M2H SP006051130

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Datasheet

IMTA65R026M2HXTMA1 Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ 650V G2 MOSFETs

Infineon Technologies CoolSiC™ 650V G2 MOSFETs leverage silicon carbide's performance capabilities by enabling lower energy loss, which translates into higher efficiency during power conversion. Infineon CoolSiC 650V G2 MOSFETs provide benefits for various power semiconductor applications like photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. A DC fast charging station for electric vehicles equipped with CoolSiC G2 allows for up to 10% less power loss than previous generations while enabling higher charging capacity without compromising form factors.