IPD60R280PFD7SAUMA1

Infineon Technologies
726-IPD60R280PFD7SAU
IPD60R280PFD7SAUMA1

Mfr.:

Description:
MOSFETs CONSUMER

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 131

Stock:
131 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$2.13 $2.13
$1.35 $13.50
$0.905 $90.50
$0.742 $371.00
$0.657 $657.00
Full Reel (Order in multiples of 2500)
$0.621 $1,552.50
$0.59 $2,950.00

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
600 V
12 A
549 mOhms
- 20 V, 20 V
4 V
15.3 nC
- 40 C
+ 150 C
51 W
Enhancement
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 8 ns
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 12 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: IPD60R280PFD7S SP003493724
Unit Weight: 4 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

600V CoolMOS™ PFD7 SJ Power MOSFET

Infineon 600V CoolMOS™ PFD7 SJ Power MOSFETs are a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction (SJ) principle and pioneered by Infineon. The CoolMOS™ PFD7 is an optimized platform tailored to target cost-sensitive applications in consumer markets, such as chargers, adapters, motor drives, lighting, etc. The series provides all the benefits of a fast-switching Super junction MOSFET, combined with an excellent price/performance ratio and state-of-the-art ease-of-use level. The technology meets the highest efficiency standards and supports high power density, enabling customers to go towards slim designs.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.