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IPP026N10NF2SAKMA1

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Mouser No:

726-IPP026N10NF2SAKM

Mfr. No:

IPP026N10NF2SAKMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >80 - 100V

Datasheet:

IPP026N10NF2SAKMA1 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	184 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	103 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Product Type:	MOSFETs
Factory Pack Quantity:	1000
Subcategory:	Transistors
Part # Aliases:	IPP026N10NF2S SP005548847

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Datasheet

IPP026N10NF2SAKMA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MOSFETs for General Purpose Applications

Infineon Technologies MOSFETs for General Purpose Applications offer simple and price-competitive solutions with a wide availability and established quality. This portfolio covers voltage classes up to 100V. It includes single and dual N-channel MOSFETs, and products for smaller power handling (single and dual N- and P-channel MOSFETs). The selected parts come in a wide range of packages including SOT-23, PQFN 2x2, PQFN 3x3, DPAK, SO-8, SuperSO8 5x6, and TO220. These products address a broad range of general-purpose applications like adapters, chargers, battery-powered applications, motor control and drives, battery management systems, inverters, computing, and mobile applications.

StrongIRFET™ 2 Power MOSFETs

Infineon Technologies StrongIRFET™ 2 Power MOSFETs are N-channel, normal level, and 100% avalanche tested MOSFETs. The Infineon StrongIRFET 2 MOSFETs are optimized for a wide range of applications. The MOSFETs offer a V_DS range of 80V to 100V and an R_DS(on) from 2.4mΩ to 8.2mΩ.