IR2213STRPBF

Infineon Technologies
942-IR2213STRPBF
IR2213STRPBF

Mfr.:

Description:
Gate Drivers 1200V high&low-side ,2.5A,Shutdown,280ns

Datasheet:
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Availability

Stock:
0

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Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$6.92 $6.92
$5.28 $52.80
$4.79 $119.75
$4.41 $441.00
$4.01 $1,002.50
$3.89 $1,945.00
Full Reel (Order in multiples of 1000)
$3.78 $3,780.00
$3.69 $7,380.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SOIC-16
2 Driver
2 Output
1.7 A
12 V
20 V
Non-Inverting
25 ns
17 ns
- 40 C
+ 125 C
IR221X
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: TW
Country of Origin: US
Features: Independent
Logic Type: CMOS, TTL
Maximum Turn-Off Delay Time: 225 ns
Maximum Turn-On Delay Time: 280 ns
Moisture Sensitive: Yes
Operating Supply Current: 340 uA
Pd - Power Dissipation: 1.25 W
Product Type: Gate Drivers
Propagation Delay - Max: 280 ns
Shutdown: Shutdown
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Unit Weight: 666 mg
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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
KRHTS:
8542311000
TARIC:
8542319000
MXHTS:
8542310302
ECCN:
EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

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