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IR2233JTRPBF

Name: Infineon IR2233JTRPBF
Brand: Infineon Technologies
SKU: 942-IR2233JTRPBF
Price: 10.44 USD
Availability: InStock

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Mouser No:

942-IR2233JTRPBF

Mfr. No:

IR2233JTRPBF

Mfr.:

Infineon Technologies

Description:

Gate Drivers 1200V 3-Phase,0.5A OCP, OPAMP, FAULT,SD

Datasheet:

IR2233JTRPBF Datasheet (PDF)

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Learn more about Infineon Technologies IR2233JTRPBF

In Stock: 349

Stock:: 349 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$10.44	$10.44
	$8.15	$81.50
	$7.58	$189.50
	$6.95	$695.00
	$6.65	$1,662.50
Full Reel (Order in multiples of 500)
	$6.45	$3,225.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

IR2233JPbF

Packaging:

Tube

Availability:

In Stock

Price:

$9.67

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	IGBT, MOSFET Gate Drivers
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	PLCC-32
Number of Drivers:	6 Driver
Number of Outputs:	6 Output
Output Current:	500 mA
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	90 ns
Fall Time:	40 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	IR223X
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Features:	Independent
Logic Type:	CMOS, LSTTL
Maximum Turn-Off Delay Time:	700 ns
Maximum Turn-On Delay Time:	750 ns
Moisture Sensitive:	Yes
Operating Supply Current:	4 mA
Pd - Power Dissipation:	2 W
Product Type:	Gate Drivers
Propagation Delay - Max:	1 us
Shutdown:	Shutdown
Factory Pack Quantity:	500
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER

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Datasheet

IR2233JTRPBF Datasheet (PDF)

Application Notes

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Technical Resources

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542310075
KRHTS:: 8542311000
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

IR2133/IR2135/IR2233/IR2235 Gate Driver ICs

Infineon Technologies IR2133/IR2135/IR2233/IR2235 Gate Driver ICs feature three independent high-side and low-side referenced output channels for 3-phase applications. The Gate Driver ICs have a proprietary HVIC technology that enables ruggedized monolithic construction. The IR2133/IR2135/IR2233/IR2235 ICs have logic inputs compatible with CMOS or LSTTL outputs down to 2.5V logic. Additionally, the devices provide an independent operational amplifier. This amplifier permits analog feedback of bridge current via an external current sense resistor.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

IR2233/IR2235 MOSFET & IGBT Drives

Infineon Technologies IR2233/IR2235 MOSFET and IGBT Drives feature three independent high- and low-side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs down to 2.5V logic. An independent operational amplifier provides analog feedback of bridge current via an external current sense resistor.