S80KS2562GABHV020

Infineon Technologies
727-S2562GABHV020
S80KS2562GABHV020

Mfr.:

Description:
DRAM SPCM

ECAD Model:
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In Stock: 3

Stock:
3 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$8.84 $8.84
$8.11 $81.10
$7.87 $196.75
$7.80 $390.00
$7.61 $761.00
$7.47 $1,867.50
$7.09 $2,396.42

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: DRAM
RoHS:  
HyperRAM
256 Mbit
8 bit
200 MHz
FBGA-24
32 M x 8
35 ns
1.7 V
2 V
- 40 C
+ 105 C
Tray
Brand: Infineon Technologies
Country of Assembly: TH
Country of Diffusion: TW
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 338
Subcategory: Memory & Data Storage
Supply Current - Max: 22 mA
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USHTS:
8542320041
ECCN:
3A991.b.2

S80KS2562 & S80KS2563 256Mb HYPERRAM™ 2.0 Memory

Infineon Technologies S80KS2562 and S80KS2563 HYPERRAM™ 2.0 Memory are high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) with a HyperBUS (S80KS2562) or Octal xSPI (S80KS2563) interface. Both devices feature a 200MHz maximum clock rate, a data throughput of up to 400MBps, and energy-saving Hybrid Sleep and Deep Power-Down modes. The S80KS2562 and S80KS2563 HYPERRAM are ideal for use in high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes.