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CGHV59350F

Name: MACOM CGHV59350F
Brand: MACOM
SKU: 941-CGHV59350F
Price: 2318.29 USD
Availability: InStock

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Mouser No:

941-CGHV59350F

Mfr. No:

CGHV59350F

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT 5.2-5.9GHz, 350 Watt

Datasheet:

CGHV59350F Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGHV59350F

Delivery Alerts:

This product may require additional documentation to export from the United States.

In Stock: 7

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2,318.29	$2,318.29

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	125 V
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Brand:	MACOM
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Gain:	11 dB
Maximum Operating Frequency:	5.9 GHz
Minimum Operating Frequency:	5.2 GHz
Output Power:	450 W
Packaging:	Tray
Product:	C-Band Radar HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	10
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V, 2 V
Unit Weight:	37 g

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Datasheet

CGHV59350F Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8542330000
USHTS:: 8542330001
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8542330299
ECCN:: EAR99

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.