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MSC030SDA120S

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Mouser No:

494-MSC030SDA120S

Mfr. No:

MSC030SDA120S

Mfr.:

Microchip Technology

Description:

SiC Schottky Diodes SIC SBD 1200 V 30 A TO-268

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Datasheet:

MSC030SDA120S Datasheet (PDF)

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Learn more about Microchip Technology MSC030SDA120S

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	SiC Schottky Diodes
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D3PAK
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	165 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	MSC0
Packaging:	Tube
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	1.2 kV

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Datasheet

MSC030SDA120S Datasheet (PDF)

DTS

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PCN

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CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.