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PSMN4R2-80YSEX

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Mouser No:

771-PSMN4R2-80YSEX

Mfr. No:

PSMN4R2-80YSEX

Mfr.:

Nexperia

Description:

MOSFETs The factory is currently not accepting orders for this product.

Datasheet:

PSMN4R2-80YSEX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia PSMN4R2-80YSEX

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-1023-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	170 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	294 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	24 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	23 ns
Part # Aliases:	934662576115

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The factory is currently not accepting orders for this product.

Filter Document:

Datasheet

PSMN4R2-80YSEX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NextPower 80/100V MOSFETs

Nexperia NextPower 80/100V MOSFETs are recommended for high-efficiency switching and high-reliability applications. The NextPower MOSFETs feature 50% lower R_DS(on) and a strong avalanche energy rating. The devices are ideally suited for power supply, telecom, industrial designs, USB-PD Type-C chargers and adapters, and 48V DC-DC adapters. The devices have low body diode losses with Q_rr down to 50 nano-coulombs (nC). This results in lower reverse recovery current (I_RR), lower voltage spikes (V_peak), and reduced ringing for further optimized dead time.