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TP65H030G4PWS

Name: Renesas Electronics TP65H030G4PWS
Brand: Renesas Electronics
SKU: 227-TP65H030G4PWS
Price: 10.09 USD
Availability: InStock

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Mouser No:

227-TP65H030G4PWS

Mfr. No:

TP65H030G4PWS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 30mohm GaN FET in TO247-3L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TP65H030G4PWS Datasheet (PDF)

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Learn more about Renesas Electronics TP65H030G4PWS

In Stock: 1,440

Stock:: 1,440 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$10.09	$10.09
	$6.03	$60.30
	$4.89	$489.00
	$4.70	$2,350.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55.7 A
Rds On - Drain-Source Resistance:	41 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	24.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	192 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	JP
Country of Origin:	CN
Fall Time:	8 ns
Packaging:	Tube
Product:	FETs
Product Type:	GaN FETs
Rise Time:	6.8 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	960
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN FET
Typical Turn-Off Delay Time:	89.2 ns
Typical Turn-On Delay Time:	40.8 ns

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Datasheet

TP65H030G4PWS Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

TP65H030G4Px 650V 30mΩ GaN FETs

Renesas Electronics TP65H030G4Px 650V 30mΩ Gallium Nitride (GaN) FETs are available in TOLT, TO247, and TOLL packages. These GaN FETs use the Gen IV Plus SuperGaN^® platform, which combines a state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and reliability.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.