GANSPIN611TR

STMicroelectronics
511-GANSPIN611TR
GANSPIN611TR

Mfr.:

Description:
Motor/Motion/Ignition Controllers & Drivers 650 V enhancement mode GaN high-power density half-bridge with high-voltage driver
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about STMicroelectronics GANSPIN611TR

In Stock: 679

Stock:
679 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$10.39 $10.39
$8.03 $80.30
$7.66 $191.50
$6.65 $665.00
$6.35 $1,587.50
$5.79 $2,895.00
$5.09 $5,090.00
Full Reel (Order in multiples of 3000)
$4.96 $14,880.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Motor/Motion/Ignition Controllers & Drivers
RoHS:  
Half-bridge Driver
Half-bridge with High-voltage Driver
10 A
900 uA
- 40 C
+ 125 C
SMD/SMT
QFN-35
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: SG
Moisture Sensitive: Yes
Number of Outputs: 1 Output
Operating Frequency: 200 kHz
Product Type: Motor / Motion / Ignition Controllers & Drivers
Series: GANSPIN
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 18 V
Supply Voltage - Min: 10.7 V
Tradename: GaNSPIN
Unit Weight: 194 mg
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

GANSPIN611 GaN High-Power Density Half-Bridge

STMicroelectronics GANSPIN611 GaN High-Power Density Half-Bridge is an advanced power system-in-package integrating two enhancement-mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have an RDS(ON) of 138mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high side of the embedded gate driver.

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