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SCT019HU120G3AG

Name: STMicroelectronics SCT019HU120G3AG
Brand: STMicroelectronics
SKU: 511-SCT019HU120G3AG
Price: 20.08 USD
Availability: InStock

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Mouser No:

511-SCT019HU120G3AG

Mfr. No:

SCT019HU120G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT019HU120G3AG Datasheet (PDF)

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In Stock: 5

Stock:: 5 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$20.08	$20.08
	$16.52	$165.20
	$14.29	$1,429.00
Full Reel (Order in multiples of 600)
	$12.63	$7,578.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Qualification:	AEC-Q100
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors

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Datasheet

SCT019HU120G3AG Datasheet (PDF)

PCN

Product Change Notification 2025-5-3 (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.