SCTW70N120G2V

STMicroelectronics
511-SCTW70N120G2V
SCTW70N120G2V

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package
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In Stock: 702

Stock:
702 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 702 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$32.55 $32.55
$21.35 $213.50
$20.93 $2,093.00
600 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
91 A
21 mOhms
- 10 V, + 22 V
4.9 V
150 nC
- 55 C
+ 200 C
547 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Packaging: Tube
Product Type: SiC MOSFETS
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Unit Weight: 4.500 g
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Attributes selected: 0

CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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