SCTWA90N65G2V-4
Images are for reference only
See Product Specifications
See Product Specifications
511-SCTWA90N65G2V-4
SCTWA90N65G2V-4
Mfr.:
Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
Datasheet:
In Stock: 99
-
Stock:
-
99 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
-
Factory Lead Time:
-
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 99 will be subject to minimum order requirements.
Long lead time reported on this product.
Pricing (USD)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| $29.12 | $29.12 | |
| $22.01 | $220.10 | |
| $21.07 | $2,107.00 | |
| 600 | Quote |
Similar Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- ECCN:
- EAR99
