+972 9 7783020

Part of the TTI Family of Specialists Contact Mouser (Tel-Aviv) +972 9 7783020 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STB24N60M6

Name: STMicroelectronics STB24N60M6
Brand: STMicroelectronics
SKU: 511-STB24N60M6
Price: 3.52 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STB24N60M6

Mfr. No:

STB24N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package

Complete Your Design

Datasheet:

STB24N60M6 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STB24N60M6

In Stock: 1,580

Stock:: 1,580 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.52	$3.52
	$2.31	$23.10
	$1.61	$161.00
	$1.40	$700.00
Full Reel (Order in multiples of 1000)
	$1.39	$1,390.00
	$1.31	$2,620.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	23 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	Mdmesh M6
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	1.380 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STB24N60M6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.