It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STD12N60DM2AG

Name: STMicroelectronics STD12N60DM2AG
Brand: STMicroelectronics
SKU: 511-STD12N60DM2AG
Price: 3.18 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD12N60DM2AG

Mfr. No:

STD12N60DM2AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in

Complete Your Design

Datasheet:

STD12N60DM2AG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STD12N60DM2AG

In Stock: 2,500

Stock:: 2,500 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.18	$3.18
	$2.07	$20.70
	$1.43	$143.00
	$1.21	$605.00
Full Reel (Order in multiples of 2500)
	$1.11	$2,775.00
	$1.10	$5,500.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	440 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	14.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STD12N60DM2AG
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	330 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STD12N60DM2AG Datasheet (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

STD12N60DM2AG N-channel Power MOSFET

STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is a part of the MDmesh™ DM2 fast-recovery diodes. This automotive-grade N-channel power MOSFET offers very low recovery charge (Q_rr) and recovery time (t_rr) combined with low R_DS(on). This power MOSFET features low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. STMicroelectronics STD12N60DM2AG N-channel Power MOSFET is suitable for demanding high-efficiency converters and for bridge topologies and ZVS phase-shift converters.