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STGP10M65DF2

Name: STMicroelectronics STGP10M65DF2
Brand: STMicroelectronics
SKU: 511-STGP10M65DF2
Price: 1.87 USD
Availability: InStock

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Mouser No:

511-STGP10M65DF2

Mfr. No:

STGP10M65DF2

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Datasheet:

STGP10M65DF2 Datasheet (PDF)

ECAD Model:

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In Stock: 2,422

Stock:: 2,422 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.87	$1.87
	$1.19	$11.90
	$0.801	$80.10
	$0.634	$317.00
	$0.58	$580.00
	$0.547	$1,094.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Series:	STGP10M65DF2
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	CN
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	1000
Subcategory:	IGBTs
Unit Weight:	2 g

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Datasheet

STGP10M65DF2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.