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STWA65N045M9

Name: STMicroelectronics STWA65N045M9
Brand: STMicroelectronics
SKU: 511-STWA65N045M9
Price: 9.53 USD
Availability: InStock

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Mouser No:

511-STWA65N045M9

Mfr. No:

STWA65N045M9

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET

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Datasheet:

STWA65N045M9 Datasheet (PDF)

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In Stock: 5

Stock:: 5

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On Order:: 1,200
Factory Lead Time:: 20

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.53	$9.53
	$5.62	$56.20
	$4.94	$592.80

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	54 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	80 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	IT
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	26 ns
Series:	MDmesh M9
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	77 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	6.100 g

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Datasheet

STWA65N045M9 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.