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GCMX020A120B2T1P

Name: SemiQ GCMX020A120B2T1P
Brand: SemiQ
SKU: 148-GCMX020A120B2T1P
Price: 72.12 USD
Availability: OutOfStock

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Mouser No:

148-GCMX020A120B2T1P

Mfr. No:

GCMX020A120B2T1P

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V 20ohm SiC MOSFET Six-Pack Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX020A120B2T1P Datasheet (PDF)

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Learn more about SemiQ GCMX020A120B2T1P

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Factory Lead Time:: 12 Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$72.12	$72.12
	$63.75	$637.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Package/Case:	B2
Transistor Polarity:	N-Channel
Number of Channels:	6 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	263 W
Series:	GCMX
Packaging:	Tray
Brand:	SemiQ
Configuration:	Hexa
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	16 ns
Height:	15 mm
Length:	62.8 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	10 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Typical Turn-Off Delay Time:	59 ns
Typical Turn-On Delay Time:	20 ns
Vf - Forward Voltage:	4.2 V
Width:	33.8 mm

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Datasheet

GCMX020A120B2T1P Datasheet (PDF)

1200V SiC MOSFET Six-Pack Modules

SemiQ 1200V SiC MOSFET Six-Pack Modules are highly efficient modules designed to boost cost-efficiency and allow more compact system-level designs. These SemiQ high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These design elements are arranged in a three-phase bridge topology. 1200V SiC MOSFET Six-Pack Modules also feature split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation. The high-power-density modules offer low switching losses and low junction-to-case thermal resistance. All parts are tested beyond 1350V with 100% wafer-level burn-in (WLBI).