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TSM150NB04DCR RLG

Name: Taiwan Semiconductor TSM150NB04DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM150NB04DCRRLG
Price: 1.62 USD
Availability: InStock

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Mouser No:

821-TSM150NB04DCRRLG

Mfr. No:

TSM150NB04DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 38A, Dual N-Channel Power MOSFET

Datasheet:

TSM150NB04DCR RLG Datasheet

ECAD Model:

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Learn more about Taiwan Semiconductor TSM150NB04DCR RLG

In Stock: 4,964

Stock:: 4,964 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4964 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.62	$1.62
	$1.03	$10.30
	$0.683	$68.30
	$0.544	$272.00
	$0.492	$492.00
Full Reel (Order in multiples of 2500)
	$0.447	$1,117.50
	$0.439	$2,195.00
	$0.437	$4,370.00
	$0.436	$10,900.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	3 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	7 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	12 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	TSM150NB04DCR
Unit Weight:	372.608 mg

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Datasheet

TSM150NB04DCR RLG Datasheet

Models

SPICE Models

SPICE Model (Text)

RoHS Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.