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CSD85301Q2

Name: Texas Instruments CSD85301Q2
Brand: Texas Instruments
SKU: 595-CSD85301Q2
Price: 0.83 USD
Availability: OutOfStock

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Mouser No:

595-CSD85301Q2

Mfr. No:

CSD85301Q2

Mfr.:

Texas Instruments

Description:

MOSFETs CSD85301Q2 Dual N- C hannel Power MOSFET A 595-CSD85301Q2T

Datasheet:

CSD85301Q2 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD85301Q2

Availability

Stock:: 0

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.83	$0.83
	$0.51	$5.10
	$0.334	$33.40
	$0.259	$129.50
	$0.227	$227.00
Full Reel (Order in multiples of 3000)
	$0.184	$552.00
	$0.169	$1,014.00
	$0.163	$1,467.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD85301Q2T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.75

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD85301Q2T

Description:

MOSFETs Dual N-Channel NexFE T Pwr MOSFET A 595- A 595-CSD85301Q2

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WSON-FET-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	600 mV
Qg - Gate Charge:	5.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.3 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns, 15 ns
Forward Transconductance - Min:	20 S, 20 S
Product Type:	MOSFETs
Rise Time:	26 ns, 26 ns
Series:	CSD85301Q2
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	14 ns, 14 ns
Typical Turn-On Delay Time:	6 ns, 6 ns
Unit Weight:	9.700 mg

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.