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INA848ID

Name: Texas Instruments INA848ID
Brand: Texas Instruments
SKU: 595-INA848ID
Price: 19.9 USD
Availability: InStock

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Mouser No:

595-INA848ID

Mfr. No:

INA848ID

Mfr.:

Texas Instruments

Description:

Instrumentation Amplifiers Ultra-low-noise hig h-bandwidth instrume A 595-INA848IDR

Datasheet:

INA848ID Datasheet

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In Stock: 96

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$19.90	$19.90
	$15.85	$158.50
	$13.98	$349.50
	$13.52	$1,014.00
	$13.15	$3,945.00
	$12.90	$6,772.50
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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Instrumentation Amplifiers
RoHS:
Series:	INA848
Number of Channels:	1 Channel
3 dB Bandwidth:	2.8 MHz
SR - Slew Rate:	45 V/us
CMRR - Common Mode Rejection Ratio:	132 dB
Ib - Input Bias Current:	25 nA
Vos - Input Offset Voltage:	10 uV
Supply Voltage - Max:	36 V
Supply Voltage - Min:	8 V
Operating Supply Current:	6.2 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Packaging:	Tube
Amplifier Type:	High-Bandwidth
Brand:	Texas Instruments
Country of Assembly:	MY
Country of Diffusion:	DE
Country of Origin:	MY
en - Input Voltage Noise Density:	1.3 nV/sqrt Hz
Gain Error:	0.05 %
Gain V/V:	2000 V/V
GBP - Gain Bandwidth Product:	2.8 MHz
In - Input Noise Current Density:	1.85 pA
Ios - Input Offset Current:	2 nA
Moisture Sensitive:	Yes
Output Current per Channel:	30 mA
Product:	Instrumentation Amplifiers
Product Type:	Instrumentation Amplifiers
PSRR - Power Supply Rejection Ratio:	150 dB
Shutdown:	No Shutdown
Factory Pack Quantity:	75
Subcategory:	Amplifier ICs

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INA848ID Datasheet

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CNHTS:: 8542339000
CAHTS:: 8542330000
USHTS:: 8542330001
MXHTS:: 8542330299
ECCN:: EAR99

INA848 Fixed-Gain Instrumentation Amplifier

Texas Instruments INA848 Fixed-Gain Instrumentation Amplifier is optimized for high-precision measurements, such as very small, fast, differential input signals. TI's super-beta topology provides a very low input bias current and current noise. The well-matched transistors help achieve a very low offset and offset drift. Matching of the internal resistors yields a high common-mode rejection ratio of 132dB across the full input-voltage range and a very low gain drift error of 5ppm/C (max).